Перегляд за автором "Godlewski, M."

Сортувати за: Порядок: Результатів:

  • Godlewski, M.; Wolska, E.; Yatsunenko, S.; Opalińska, A.; Fidelus, J.; Łojkowski, W.; Zalewska, M.; Kłonkowski, A.; Kuritsyn, D. (Физика низких температур, 2009)
    Nanoparticles of wide band gap materials doped with transition metal ions or rare earth ions are intensively studied for their possible applications in a new generation of light sources for an overhead illumination. In ...
  • Godlewski, M.; Yatsunenko, S.; Ivanov, V.Yu.; Drozdowicz-Tomsia, K.; Goldys, E.M.; Phillips, M.R.; Klar, P.J.; Heimbrodt, W. (Физика низких температур, 2007)
    Intra-shell transitions of transition metal and rare earth ions are parity forbidden processes. For Mn²⁺ ions this is also a spin forbidden process, i.e., light emission should be inefficient. Surprisingly, it was ...
  • Godlewski, M.; Surma, M.; Ivanov, V.Yu.; Surkova, T.P. (Физика низких температур, 2004)
    Possible applications of ZnSe:Cr in optoelectronics are discussed. It is shown that 2+ to 1+ photo-ionization of chromium results in efficient pumping of Cr²⁺ intrashell emission and in energy up-conversion from green ...
  • Godlewski, M.; Guziewicz, E.; Kopalko, K.; Łuka, G.; Łukasiewicz, M.I.; Krajewski, T.; Witkowski, B.S.; Gierałtowska, S. (Физика низких температур, 2011)
    We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth ...
  • Semikina, T.V.; Mamykin, S.V.; Godlewski, M.; Luka, G.; Pietruszka, R.; Kopalko, K.; Krajewski, T.A.; Gierałtowska, S.; Wachnicki, L.; Shmyryeva, L.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated ...